OFF-STATE BREAKDOWN EFFECTS ON GATE LEAKAGE CURRENT IN POWER PSEUDOMORPHIC ALGAAS INGAAS HEMTS/

The effects of off-state breakdown on characteristics of power AlGaAs/ InGaAs pseudomorphic HEMT's (PHEMT's) are investigated in detail. Whil e the gate leakage current is substantially decreased after breakdown stress, no obvious changes in drain-to-source current and transconduct ance are observed. Prior to breakdown stress, gate leakage current sho ws a nearly ideal 1/f noise characteristics with an Ig(2) dependence, suggesting a surface generation-recombination current from the interfa ce of passivation layer. After stress, the gate current noise can be d rastically reduced. The results suggest an alternative for alleviating the gate leakage current in PHEMT's.