EFFECT OF STRONTIUM SUBSTITUTION IN (NB, BI) DOPED TIO2 VARISTORS

Authors
SANTHOSH PN KHARAT DK DATE SK
Citation
Pn. Santhosh et al., EFFECT OF STRONTIUM SUBSTITUTION IN (NB, BI) DOPED TIO2 VARISTORS, Materials letters, 28(1-3), 1996, pp. 37-41
Citations number
11
Categorie Soggetti
Material Science","Physics, Applied
Journal title
Materials letters → ACNP
ISSN journal
0167577X
Volume
28
Issue
1-3
Year of publication
1996
Pages
37 - 41
Database
ISI
SICI code
0167-577X(1996)28:1-3<37:EOSSI(>2.0.ZU;2-1
Abstract
A low voltage TiO2 varistor doped with Nb2O5, Bi2O3 and SrO was system atically investigated. The two performance parameters, the nonlinear c oefficient (a) and breakdown voltage per grain boundary were estimated from the I-V measurements and found to be alpha = 8.4 and E(gb1) per grain boundary = 0.31 V. The room temperature dielectric constant was found to be very large (epsilon approximate to 18 000). Powder XRD and SEM studies have shown the desirable macro and microstructural charac teristics of these dense compacts.