GROWTH OF MULTI-CRYSTALLINE SILICON ON SEEDED GLASS FROM METALLIC SOLUTIONS

Citation
I. Silier et al., GROWTH OF MULTI-CRYSTALLINE SILICON ON SEEDED GLASS FROM METALLIC SOLUTIONS, Materials letters, 28(1-3), 1996, pp. 87-91
Citations number
21
Categorie Soggetti
Material Science","Physics, Applied
Journal title
ISSN journal
0167577X
Volume
28
Issue
1-3
Year of publication
1996
Pages
87 - 91
Database
ISI
SICI code
0167-577X(1996)28:1-3<87:GOMSOS>2.0.ZU;2-8
Abstract
Crystalline Si was grown on substrates of fused quartz, borosilicate, and sodalime glass. The glass substrates were initially coated with a seeding layer of thin nano-crystalline silicon. The nano-crystalline S i was deposited by plasma processes from a mixture of SiH4/H-2 gas. Th en, on the seeding layer, crystalline Si was grown from a metallic sol ution of In or Ga solvent which was saturated with Si. The grains in t he solution-grown Si reached sizes up to 100 mu m. The properties of t he crystalline silicon on glass are described.