Crystalline Si was grown on substrates of fused quartz, borosilicate,
and sodalime glass. The glass substrates were initially coated with a
seeding layer of thin nano-crystalline silicon. The nano-crystalline S
i was deposited by plasma processes from a mixture of SiH4/H-2 gas. Th
en, on the seeding layer, crystalline Si was grown from a metallic sol
ution of In or Ga solvent which was saturated with Si. The grains in t
he solution-grown Si reached sizes up to 100 mu m. The properties of t
he crystalline silicon on glass are described.