GAS-SOURCE MOLECULAR-BEAM EPITAXY OF BETA-SIC ON SI SUBSTRATES

The growth of beta-SiC films on Si(100) substrates using C2H2 gas and Si solid sources in a molecular beam epitaxy system has been investiga ted. Different C2H2 and Si fluxes as well as different substrate tempe ratures have been used. The growth was performed at two steps: the ini tial optimal carbonisation step followed by the MBE growth with simult aneous supply of Si molecular and C2H2 gas beams. The films were analy sed using reflected high-energy electron diffraction, scanning electro n microscopy, transmission electron microscopy. atomic force microscop y and Fourier transform infrared spectroscopy. Thin (< 0.1 mu m) singl e crystalline SiC was grown at 980 degrees C while 850 degrees C was s ufficient for the carbonisation of the Si surface, Films thicker than 0.1 pm are partially polycrystalline.