BULK AND SURFACE STRUCTURAL-PROPERTIES OF SI1-X-YGEXCY LAYERS PROCESSED ON SI(001) BY PULSED-LASER INDUCED EPITAXY

Si1-x-yGexCy films have been grown by pulsed laser induced epitaxy (PL IE) from C+ implanted pseudomorphic Si1-xGex films and from hydrogenat ed amorphous a-SiGeC:H films deposited on Si(001). The laser treated s amples are examined by electron channelling patterns analysis, X-ray d iffraction, channelling Rutherford backscattering spectroscopy and ato mic force microscopy (AFM). Lf laser fluence exceeds a threshold for w hich the melted zone is thicker than the initial SiGeC layer, the lase r induced epitaxy is effective, We show that laser fluence strongly in fluences germanium profiles. Germanium and carbon atoms are redistribu ted over the melted depth with a graded profile. Strain profiles, dedu ced from X-ray dynamical diffraction simulations, exhibit the same gra dual evolution from the surface down to the substrate. AFM measurement s show a strong decrease of rugosity obtained with suitable PLIE opera ting conditions.