GE SI(100) HETEROSTRUCTURES - A PHOTOEMISSION AND LOW-ENERGY YIELD SPECTROSCOPY INVESTIGATION/

Authors
DIGASPARE L CAPELLINI G SEBASTIANI M CHUDOBA C EVANGELISTI F
Citation
L. Digaspare et al., GE SI(100) HETEROSTRUCTURES - A PHOTOEMISSION AND LOW-ENERGY YIELD SPECTROSCOPY INVESTIGATION/, Applied surface science, 102, 1996, pp. 94-97
Citations number
14
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
102
Year of publication
1996
Pages
94 - 97
Database
ISI
SICI code
0169-4332(1996)102:<94:GSH-AP>2.0.ZU;2-X
Abstract
Heterostructures formed by epitaxial Ge grown in situ on Si(100) subst rates were characterized by photoelectric yield spectroscopy, UPS and XPS. It is shown that both substrate and overlayer valence-band tops c an be identified in the photoelectric-yield spectrum, thus allowing a direct and precise determination of the band lineup. We find a valence band discontinuity of 0.36 +/- 0.02 eV for heterojunctions whose over layers were grown according to the Stranski-Krastanov mechanism, A con siderably larger offset is obtained from the analysis of the XPS data.