SEGREGATION OF N-DOPANTS ON SIGE SURFACES

Authors
NUTZEL JF HOLZMANN M SCHITTENHELM P ABSTREITER G
Citation
Jf. Nutzel et al., SEGREGATION OF N-DOPANTS ON SIGE SURFACES, Applied surface science, 102, 1996, pp. 98-101
Citations number
13
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
102
Year of publication
1996
Pages
98 - 101
Database
ISI
SICI code
0169-4332(1996)102:<98:SONOSS>2.0.ZU;2-W
Abstract
We have investigated the surface segregation of phosphorus in comparis on to antimony on Si and SiGe(001) in molecular beam epitaxy. The segr egation was measured with electrochemical capacitance voltage and seco ndary ion mass spectroscopy. Phosphorus doping is used to achieve high carrier concentrations in complementary double-sided modulation-doped n-Si and p-Ge channel (CMOD) structures on SiGe graded buffers.