XPD STUDY OF ATOMIC INTERMIXING AT THE GE SI(001) INTERFACE/

Authors
DAVOLI I GUNNELLA R CASTRUCCI P PINTO N BERNARDINI R DECRESCENZI M
Citation
I. Davoli et al., XPD STUDY OF ATOMIC INTERMIXING AT THE GE SI(001) INTERFACE/, Applied surface science, 102, 1996, pp. 102-106
Citations number
26
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
102
Year of publication
1996
Pages
102 - 106
Database
ISI
SICI code
0169-4332(1996)102:<102:XSOAIA>2.0.ZU;2-B
Abstract
XPD (X-ray photoelectron diffraction) was used to probe the crystallin e structure of 3 ML and 6 ML of Ge epitaxially grown on Si(001) surfac e at room and 400 degrees C temperatures in order to check the tetrago nal distortion associated with the pseudomorphic growth, Strong eviden ces for an interfacial intermixing and crystalline growth even at the room temperature of the substrate has been found by means of the obser vation of the angular behavior of the Ge 3d photoelectron peak.