ELECTRICAL AND PHOTOELECTRICAL CHARACTERIZATION OF DIAMOND-ON-SILICONSTRUCTURES

Authors
SALVATORI S VINCENZONI R ROSSI MC GALLUZZI F PINZARI F MATTEI G CAPPELLI E ASCARELLI P
Citation
S. Salvatori et al., ELECTRICAL AND PHOTOELECTRICAL CHARACTERIZATION OF DIAMOND-ON-SILICONSTRUCTURES, Applied surface science, 102, 1996, pp. 125-129
Citations number
12
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
102
Year of publication
1996
Pages
125 - 129
Database
ISI
SICI code
0169-4332(1996)102:<125:EAPCOD>2.0.ZU;2-G
Abstract
Electronic properties of diamond films grown on silicon by hot-filamen t CVD have been investigated. Results of electrical measurements with different geometries, in the dark and under illumination, are related to diamond film structure through simple transport models.