Metal-semiconductor junctions have been fabricated by a solid state re
action in a Ni-Ti-Si layered system with the Ti interlayer acting as a
diffusion barrier controlling the silicide forming reaction [1]. it h
as been shown, that annealing between 450 and 475 degrees C for about
30 min leads to laterally extended about 60 nm thick epitaxially grown
NiSi2 with low contact resistivity. We have succeeded in preparing wi
dely extended cross-section TEM samples providing electron transparenc
y over more than 100 mu m which allows imaging and analysis of the gro
wing phases. Obviously, the extension of the epitaxially grown NiSi2 p
latelets is dependent on the exact orientation of the silicon waver su
rface. The position of the initial wafer surface is marked by an about
15 nm thick amorphous layer in ail investigated samples. The composit
ion of this layer was determined to be Ti with a low concentration of
silicon and a shortage of nickel as compared with the neighboring crys
talline TixNiy and NixSiy layers. This composition suggests that this
amorphous interlayer should play an important role for controlling the
nickel silicide growth rate.