OPTICAL AND ELECTRICAL CHARACTERIZATION OF HIGH-QUALITY BETA-FESI2 THIN-FILMS GROWN BY SOLID-PHASE EPITAXY

Authors
TASSIS DH MITSAS CL ZORBA TT ANGELAKERIS M DIMITRIADIS CA VALASSIADES O SIAPKAS DI KIRIAKIDIS G
Citation
Dh. Tassis et al., OPTICAL AND ELECTRICAL CHARACTERIZATION OF HIGH-QUALITY BETA-FESI2 THIN-FILMS GROWN BY SOLID-PHASE EPITAXY, Applied surface science, 102, 1996, pp. 178-183
Citations number
13
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
102
Year of publication
1996
Pages
178 - 183
Database
ISI
SICI code
0169-4332(1996)102:<178:OAECOH>2.0.ZU;2-O
Abstract
High quality beta-FeSi2 thin films were grown on Si[100] substrates by UHV electron beam evaporation of alpha-Si/Fe multilayers and annealed by conventional vacuum furnace and rapid thermal techniques. Infrared spectroscopy (reflectance and transmittance) and electrical measureme nts were employed to characterize the films. Hall measurements perform ed on the thin films yielded exceptionally high free carrier mobilitie s, up to 112 cm(2)/Vs.