TRANSPORT IN SILICON GERMANIUM NANOSTRUCTURES

Authors
HOLZMANN M TOBBEN D ABSTREITER G
Citation
M. Holzmann et al., TRANSPORT IN SILICON GERMANIUM NANOSTRUCTURES, Applied surface science, 102, 1996, pp. 230-236
Citations number
34
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
102
Year of publication
1996
Pages
230 - 236
Database
ISI
SICI code
0169-4332(1996)102:<230:TISGN>2.0.ZU;2-F
Abstract
Transport in laterally nanopatterned high mobility two-dimensional ele ctron and hole gases confined in Si/SiGe and Ge/SiGe is studied at low temperatures. Periodic arrays of antidots and wires as well as single nanostructures like quantum point-contacts or in-plane-gate transisto rs were fabricated. The devices show a variety of typical mesoscopic e ffects.