UNIAXIAL-STRESS EFFECTS ON A SI SI1-XGEX DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURE STUDIED BY MAGNETOTUNNELING SPECTROSCOPY/

Authors
GENNSER U ZASLAVSKY A GRUTZMACHER DA GASSOT P PORTAL JC
Citation
U. Gennser et al., UNIAXIAL-STRESS EFFECTS ON A SI SI1-XGEX DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURE STUDIED BY MAGNETOTUNNELING SPECTROSCOPY/, Applied surface science, 102, 1996, pp. 242-246
Citations number
10
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
102
Year of publication
1996
Pages
242 - 246
Database
ISI
SICI code
0169-4332(1996)102:<242:UEOASS>2.0.ZU;2-G
Abstract
Magnetotunnelling spectroscopy combined with the application of uniaxi al stress has been performed on a p-type Si/Si1-xGex double barrier re sonant tunnelling structure. Large effects of the strain are seen both in the intensity of the resonances, in the position of the resonance voltages, and on the curvature of the hole-subband dispersions. The ch ange in intensity is indicative of the bandmixing taking place in the barriers. The observed voltage shifts cannot be explained by a simple four-band model for an isolated quantum well.