We used photocurrent spectroscopy at 300 K, 77 K and 4.2 K to investig
ate the optical absorption processes of (001) Si-Ge strained layer sup
erlattices and alloys with an average composition of 50%Si-50%Ge. We o
bserved an evolution toward higher energies of the threshold in the ph
otocurrent spectra as the period of the superlattices decreases, with
the spectrum of the shortest period superlattices (2:2) approaching th
at of the alloy. The energy dependence of absorption in these Si-Gr he
terostructures is quite distinct from that measured in elemental silic
on.