ROOM-TEMPERATURE ELECTROLUMINESCENCE OF ER-IMPLANTED SILICON DIODES GROWN BY MBE

Authors
JAUMANN M STIMMER J SCHITTENHELM P NUTZEL JF ABSTREITER G NEUFELD E HOLLANDER B BUCHAL C
Citation
M. Jaumann et al., ROOM-TEMPERATURE ELECTROLUMINESCENCE OF ER-IMPLANTED SILICON DIODES GROWN BY MBE, Applied surface science, 102, 1996, pp. 327-330
Citations number
6
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
102
Year of publication
1996
Pages
327 - 330
Database
ISI
SICI code
0169-4332(1996)102:<327:REOESD>2.0.ZU;2-F
Abstract
We investigated the room temperature electroluminescence of Er doped s ilicon diodes codoped with O or F as a function of dopant concentratio n and annealing conditions. Samples with Er concentrations of 5 x 10(1 7) cm(-3) and 10(18) cm(-3) show the most luminescence at lambda = 1.5 4 mu m. In case of F codoping the Er3+ peak intensity at 300 K is weak and there is a strong defect related peak at about the same wavelengt h.