RECENT PROGRESS OF HETEROSTRUCTURE TECHNOLOGIES FOR NOVEL SILICON DEVICES

The recent progress in Si heterostructure technologies is reviewed fro m physical and engineering viewpoints. Advanced methods to fabricate u ltrashallow p-n junctions and high quality heterojunctions (SiGe/Si, m u c-Si/SiC/Si) are developed to make a breakthrough in pushing back th e limitation of Si-ULSI. Band engineering technology based on superstr uctures is also established by developing atomic hydrogen assisted mol ecular beam epitaxy. This opens up nsw expectations for Si-based optoe lectronic integrated circuits, In addition, self-organized processing for nano-structure fabrication is being developed to realize new-conce pt quantum functional devices.