S. Grigoropoulos et al., CHARACTERIZATION OF LIGHT-EMITTING SILICON NANOPILLARS PRODUCED BY LITHOGRAPHY AND ETCHING, Applied surface science, 102, 1996, pp. 377-380
Citations number
5
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Silicon nanopillars were produced by using deep-UV lithography, fluori
ne based highly anisotropic silicon etching and further thinning by hi
gh temperature thermal or chemical oxidation and oxide removal. The ob
tained structures were fully characterized by scanning and transmissio
n electron microscopy, electron diffraction, atomic force microscopy a
nd X-ray photoelectron spectroscopy. It was verified that the obtained
nanopillars by the above process are of perfect crystallinity, the bo
ttom silicon surface on which they lie is very smooth and that minor s
urface contamination by carbon or oxygen is present on both the bottom
silicon surface and the surface surrounding the nanopillars. The obta
ined luminescence peak is in the red-green spectral region.