INTENSE PHOTOLUMINESCENCE FROM STRAINED SIGE SUB-100 NM WIRES SELECTIVELY GROWN ON SI BY LPCVD

Authors
SOUIFI A VESCAN L LOO R GARTNER P DIEKER C HARTMANN A LUTH H
Citation
A. Souifi et al., INTENSE PHOTOLUMINESCENCE FROM STRAINED SIGE SUB-100 NM WIRES SELECTIVELY GROWN ON SI BY LPCVD, Applied surface science, 102, 1996, pp. 381-384
Citations number
11
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
102
Year of publication
1996
Pages
381 - 384
Database
ISI
SICI code
0169-4332(1996)102:<381:IPFSSS>2.0.ZU;2-C
Abstract
Selective epitaxial growth by low pressure chemical vapor deposition h as been used to produce SiGe- heterostructures in oxide-windows parall el to [110] or [100] directions on [001] silicon substrates. For [110] oxide-wall directions, {111} and {311} facets are formed at the edge of the epitaxial areas, while only {110} facets develop for [100] dire ctions. Transmission electron microscopy characterizations have clearl y shown the formation of quantum wires near the intersecting (001) and {110} planes. The wires have a regular width of 100 nm and a thicknes s of 6 nm and show a very strong photoluminescence.