ELECTROLUMINESCENT POROUS SILICON P-N-JUNCTION USING POLYCRYSTALLINE SILICON FILMS

Authors
CHANECHELAI F BEAU C BRIAND D JOUBERT P
Citation
F. Chanechelai et al., ELECTROLUMINESCENT POROUS SILICON P-N-JUNCTION USING POLYCRYSTALLINE SILICON FILMS, Applied surface science, 102, 1996, pp. 399-403
Citations number
28
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
102
Year of publication
1996
Pages
399 - 403
Database
ISI
SICI code
0169-4332(1996)102:<399:EPSPUP>2.0.ZU;2-8
Abstract
Electroluminescent devices have been achieved by anodization of a n(+) -type polycrystalline Si film deposited on p-type substrate. Al and Au -Pd pads were used to form the electrical contact on the porous n(+)-p junction. The current-voltage characteristics of the structures are s ignificantly dependent on the type of metallic contact. Electrolumines cence of the devices is also investigated.