DIFFERENT MORPHOLOGY ASPECTS OF N-TYPE POROUS SILICON

Four morphology types of pore structures, that were formed with optima l values of parameters of the system consisted of silicon wafer and el ectrolyte mixture while changing either temperature or wavelength of i nitializing irradiation were discovered. The results of optical and el ectrophysical measurements and physical-chemical analysis are discusse d. The assumption concerning possible self-similarity of morphologies of both structures: macro- and micropores is put forward. The analysis of general regularities testifies to existence of the universal fract al mechanism of pores formation process.