THE INVESTIGATION OF DEFECT FORMATION IN CHEMICAL-VAPOR-DEPOSITED DIAMOND USING PHOTOLUMINESCENCE BY ULTRAVIOLET SYNCHROTRON-RADIATION

Photoluminescence (PL) of microwave assisted chemical vapor deposited (CVD) diamond was obtained using ultraviolet synchrotron radiation. Th e PL spectrum of the 5RL band (intrinsic defect), which cannot be dete cted in cathodoluminesence, was observed for both undoped (as grown) a nd boron doped (200 ppm) CVD diamond. The defect formation was charact erized in the thin near-surface layer. The peak of boron related origi n (2.3 eV) was detected in the boron doped CVD while band A (2.9 eV) w as not observed. After remote hydrogen plasma treatment (RHPT), the ne ar-surface defect related peak in the PL spectra disappeared. During R HPT the diamond was rehybridized by hydrogen radicals without etching. (C) 1996 American Institute of Physics.