STICKING COEFFICIENT AND GROWTH-RATE DURING AL CHEMICAL-VAPOR-DEPOSITION

Studies of aluminum chemical vapor deposition (CVD) from dimethylethyl amine alane on GaAs(100) 2x4 surfaces were used to identify the high-t emperature, flux-limited growth regime and determine the effective sti cking coefficient alpha. Following a short induction period, a was fou nd to achieve a largely temperature-independent steady-state value (al pha=0.13+/-0.04), substantially lower than expected based on current C VD models. We propose that steric effects-previously ignored in CVD-pl ay a role in determining the upper limit of alpha and therefore the ma ximum achievable growth rate. (C) 1996 American Institute of Physics.