APPLICATION OF NEAR-EDGE X-RAY-ABSORPTION FINE-STRUCTURE FOR THE IDENTIFICATION OF HEXAGONAL AND CUBIC POLYTYPES IN EPITAXIAL GAN

Citation
M. Katsikini et al., APPLICATION OF NEAR-EDGE X-RAY-ABSORPTION FINE-STRUCTURE FOR THE IDENTIFICATION OF HEXAGONAL AND CUBIC POLYTYPES IN EPITAXIAL GAN, Applied physics letters, 69(27), 1996, pp. 4206-4208
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
69
Issue
27
Year of publication
1996
Pages
4206 - 4208
Database
ISI
SICI code
0003-6951(1996)69:27<4206:AONXFF>2.0.ZU;2-T
Abstract
Cubic and hexagonal GaN thin films are studied using the angular depen dence of the near-edge x-ray absorption fine structure (NEXAFS) spectr a recorded at thp N-K edge. It is shown that the energy positions of t he NEXAFS resonances are characteristic of the cubic and hexagonal str uctures and, thus, the NEXAFS spectra can be used as a fingerprint of the symmetry of the examined crystal. Deviations from the zinc-blende or wurtzite phases are clearly detectable since they lead to a systema tic energy shift in the NEXAFS resonances. Finally, a method is propos ed for the quantitative estimation of the percentages of the cubic and wurtzite phases present in a mixed crystal. (C) 1996 American Institu te of Physics.