BE DOPING OF (311)A AND (100) AL0.24GA0.76AS GROWN BY MOLECULAR-BEAM EPITAXY

Citation
N. Galbiati et al., BE DOPING OF (311)A AND (100) AL0.24GA0.76AS GROWN BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 69(27), 1996, pp. 4215-4217
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
69
Issue
27
Year of publication
1996
Pages
4215 - 4217
Database
ISI
SICI code
0003-6951(1996)69:27<4215:BDO(A(>2.0.ZU;2-S
Abstract
The use of Be as a p-type dopant in AlxGa1-xAs and in modulation doped heterostructures grown by molecular beam epitaxy on (311)A oriented s ubstrates is investigated. Photoluminescence and electrical measuremen ts reveal that Be is incorporated as an acceptor in (311)A oriented Al (x)Fa(1-x)As with a slightly greater efficiency than in (100) oriented AlxGa1-xAs. The optical properties of the (311)A samples are better t han those of the (100) oriented samples. An estimate of the Be binding energy yields 32 +/- 4 meV at x = 0.240 +/- 0.004. A two-dimensional hole gas with a very high mobility (250 000 cm(2)/Vs at 100 mK) and wi th clear fractional quantum hall effect is formed in the modulation of Be doped heterostructures grown on the (311)A orientation. (C) 1996 A merican Institute of Physics.