GROWTH OF SI AND C DELTA-DOPED NIPI DOPING SUPERLATTICES IN GAAS BY METAL-ORGANIC VAPOR-PHASE EPITAXY

We have optimized growth conditions of metal organic vapor phase epita xy (MOVPE) in order to grow Si and C delta-doped nipi doping superlatt ices in GaAs. Trimethylaluminium (TMAl) and silane (SiH4) were used as p-type and n-type doping precursors, respectively. We report that at 630 degrees C, full compensation of free electrons and holes can be ob tained in the MOVPE-grown Si and C delta-doped nipi doping superlattic es over a very wide range of the sheet carrier densities (10(12)-10(13 ) cm(-2)) by choosing proper TMAl flow rate and Si delta-doping time o r SiH4 flow rate. The experimental results on electrical and optical c haracterization of Si and C delta-doped nipi doping superlattices in G aAs with 150 Angstrom thick undoped spacer layers are presented. (C) 1 996 American Institute of Physics.