CONDUCTIVITY ACROSS RANDOM BARRIER DISTRIBUTION AS ORIGIN OF LARGE LOW-FREQUENCY DIELECTRIC PEAK IN PEROVSKITE CRYSTALS AND CERAMICS

Citation
Vh. Schmidt et al., CONDUCTIVITY ACROSS RANDOM BARRIER DISTRIBUTION AS ORIGIN OF LARGE LOW-FREQUENCY DIELECTRIC PEAK IN PEROVSKITE CRYSTALS AND CERAMICS, Journal of physics and chemistry of solids, 57(10), 1996, pp. 1493-1497
Citations number
7
Categorie Soggetti
Physics, Condensed Matter",Chemistry
ISSN journal
00223697
Volume
57
Issue
10
Year of publication
1996
Pages
1493 - 1497
Database
ISI
SICI code
0022-3697(1996)57:10<1493:CARBDA>2.0.ZU;2-5
Abstract
Several perovskite crystals and ceramics show very large dielectric (e psilon') peaks at high temperature T and low frequency f. In some case s these peaks are in the cubic phase far above any ferroelectric trans ition. Even at the peaks, the lossy part epsilon '' is larger than the real part epsilon'. The epsilon' vs T curves for different f follow t he same d.c. (low-f) envelope down to some T(f) below which the curve for that f falls below the envelope. Similarly, the conductivity (or e psilon '') data show d.c. and a.c. (high-frequency) envelopes for whic h data at different f overlap. As a first approximation to a crystal w ith random barriers impeding conductivity, a model with barriers B (in T units) every lattice constant a = 4 Angstrom and barriers B + Delta every distance d is assumed. The model is fit to permittivity and con ductivity data for a strontium titanate single crystal, and a good qua litative fit is obtained.