STUDY OF THE INTERFACE OF ZNSE GAAS(110) HETEROSTRUCTURES/

Authors
CHAUDHARI GN MANORAMA SV RAO VJ
Citation
Gn. Chaudhari et al., STUDY OF THE INTERFACE OF ZNSE GAAS(110) HETEROSTRUCTURES/, INDIAN JOURNAL OF ENGINEERING AND MATERIALS SCIENCES, 3(5), 1996, pp. 215-218
Citations number
18
Categorie Soggetti
Engineering
Journal title
INDIAN JOURNAL OF ENGINEERING AND MATERIALS SCIENCES → ACNP
ISSN journal
09714588
Volume
3
Issue
5
Year of publication
1996
Pages
215 - 218
Database
ISI
SICI code
0971-4588(1996)3:5<215:SOTIOZ>2.0.ZU;2-H
Abstract
The different phases formed at the ZnSe/GaAs interface and Schottky ba rrier height have been studied by low angle X-ray diffraction, current -voltage and capacitance-voltage characteristics. It has been shown th at three phases namely Ga2Se3, As2Se3 and Zn3As2 are formed after anne aling the ZnSe films on GaAs at different temperatures. The diode char acteristics improved significantly and the barrier height is found to increase with increasing annealing temperature.