INFLUENCE OF DISLOCATION INTERACTIONS WITH IMPURITIES ON THEIR TOPOGRAPHICAL IMAGES IN SILICON-CRYSTALS

Silicon crystals contained copper atoms included by diffusion way duri ng high temperature treatment have been investigated by means of X-ray transmission topography (Lang method). The studies allow us to observ e the increase or decrease in the dislocation images widths in depende nce on the time of diffusin annealing. In one case, during the more pr olonged decoration process a build-up of decorating particles on dislo cation occurs with widening of the topographic images of this dislocat ion. In another case (short time of decorating process) some compensat ion of defect deformation fields has been noticed (shortening of the m entioned images takes part). The obtained effects depend not only on t he type of intrinsic impurities which take part in forming the Cottrel l atmospheres but also on the duration of diffusion annealing. The obs erved results of interaction of dislocations with impurities have been confirmed by the studies of the integral reflectivity of decorated sa mples by means of the double-crystal spectrometer.