EFFECT OF DEEP-LEVEL TRAPPING OF FREE-CARRIERS ON THE STABILIZATION OF CURRENT-VOLTAGE CHARACTERISTICS OF HIGH-RESISTIVITY SILICON DETECTORS IRRADIATED BY HIGH FLUENCE OF NEUTRONS

The observed smooth, good I-V behavior of neutron irradiated p(+)/n/n( +) silicon detectors in the transition region of junction switching si de from p(+) to n(+) (space charge sign inversion from positive to neg ative) has been explained by a space charge limited current model. Thi s simple model involves deep level trapping induced space charge modif ication that acts as a ''negative feed back'' for current injection. T he injection current levels predicted by the model for which the feed back would work agree well with those observed in the experiments.