T. Kitamura et al., ORIENTATION MEASUREMENT OF AL(111) PLANES IN AL-SI-CU INTERCONNECTIONLAYERS BY THE IMAGE-PLATING GLANCING-ANGLE X-RAY-DIFFRACTION METHOD, Electronics & communications in Japan. Part 2, Electronics, 79(7), 1996, pp. 106-112
The orientation of Al(111) planes in Al-Si-Cu interconnection layers i
s determined precisely by the image-plating glancing-angle X-ra diffra
ction measurement technique. Contrary to the results obtained by the c
onventional X-ray diffraction method, the Al(111) planes are tilted ra
ndomly at axial angles between 0 degrees and 16 degrees. A 50-nm thick
layer has a large number of nuclei which were rich in Cu and has an a
verage grain size of 0.12 mu m. Furthermore, the Al(111) planes are or
iented parallel to the substrate surface. However, the grain size incr
eased with increasing film thickness and reaches a grain size of 1.10
mu m. In addition, the Al(111) planes are determined to be tilted at r
andom.