ZR-BN MULTILAYERS OBTAINED BY ION-ASSISTED SPUTTERING - AN FT-IR, GAXRD AND AES DEPTH PROFILING CHARACTERIZATION

Different multilayers [Zr-x/(BN)(y)](n) have been deposited on Si(100) substrates using a double ion beam sputtering system. The method cons ists of the alternate deposition of Zr and BN onto the Si substrate an d their bombardment with low-energy N-2(+) or Ar+ ions during growth. The different films have been characterized by Fourier transform IR sp ectroscopy, glancing angle X-ray diffraction at theta=0.5 degrees and AES depth profiling as a function of the deposition conditions. The re sults show that low-energy Ar+ bombardment during deposition causes en ough collisional mixing between the layers to allow formation of terna ry compounds of the type ZrNxBy that hinder the oxidation of the zirco nium layers. In contrast, assistance with low-energy N-2(+)-ions does not induce such mixing and the zirconium layers appear highly oxidized depending on the residual oxygen pressure.