M. Sano et al., PHOTOIONIZATION OF 4D-ELECTRONS IN SINGLY CHARGED XE IONS, Journal of physics. B, Atomic molecular and optical physics, 29(22), 1996, pp. 5305-5313
Using a photon-ion merged-beam technique, we measured the relative yie
ld spectra of Xe2+ and Xe3+ ions created by photoionization of Xe+ ion
s as a function of the photon energy in the 4d ionization region. The
Xe3+ ion production, i.e. the double-electron ionization process is fo
und to be dominant throughout the energy range investigated; A broad s
tructure of 4d excitation ionization around 100 eV photon energy was o
bserved in the Xe3+ yield spectrum. A spectral shoulder was observed f
or Xe3+ at aro;nd 85 eV, which was absent in the photoionization of ne
utral Xe. Some discrete lines were observed for both the Xe2+- and Xe3
+-yield spectra below 75 eV. The experimental spectra were analysed by
a multiconfiguration Dirac-Fock calculation. The largest structure at
around 100 eV is attributable to 4d(10)5s(2)5p(5) --> 4d(9)4f5s(2)5p(
4)np (n = 6, 7) two-electron transitions. The discrete lines were foun
d to be due to 4d --> np, nf transitions. A serious 4f-orbital collaps
e is suspected in the 4fnp two-electron excited states, whereas the co
llapse is moderate in the singly excited 4f-orbitals.