PHOTOIONIZATION OF 4D-ELECTRONS IN SINGLY CHARGED XE IONS

Citation
M. Sano et al., PHOTOIONIZATION OF 4D-ELECTRONS IN SINGLY CHARGED XE IONS, Journal of physics. B, Atomic molecular and optical physics, 29(22), 1996, pp. 5305-5313
Citations number
24
Categorie Soggetti
Physics, Atomic, Molecular & Chemical",Optics
ISSN journal
09534075
Volume
29
Issue
22
Year of publication
1996
Pages
5305 - 5313
Database
ISI
SICI code
0953-4075(1996)29:22<5305:PO4ISC>2.0.ZU;2-Y
Abstract
Using a photon-ion merged-beam technique, we measured the relative yie ld spectra of Xe2+ and Xe3+ ions created by photoionization of Xe+ ion s as a function of the photon energy in the 4d ionization region. The Xe3+ ion production, i.e. the double-electron ionization process is fo und to be dominant throughout the energy range investigated; A broad s tructure of 4d excitation ionization around 100 eV photon energy was o bserved in the Xe3+ yield spectrum. A spectral shoulder was observed f or Xe3+ at aro;nd 85 eV, which was absent in the photoionization of ne utral Xe. Some discrete lines were observed for both the Xe2+- and Xe3 +-yield spectra below 75 eV. The experimental spectra were analysed by a multiconfiguration Dirac-Fock calculation. The largest structure at around 100 eV is attributable to 4d(10)5s(2)5p(5) --> 4d(9)4f5s(2)5p( 4)np (n = 6, 7) two-electron transitions. The discrete lines were foun d to be due to 4d --> np, nf transitions. A serious 4f-orbital collaps e is suspected in the 4fnp two-electron excited states, whereas the co llapse is moderate in the singly excited 4f-orbitals.