DETERMINATION OF VELOCITY DISTRIBUTIONS IN SEMICONDUCTOR-DEVICES VIA HALF-RANGE RESOLUTION OF THE BOUNDARY-LAYERS

Future generations of VLSI circuits will require semiconductor devices that are faster and smaller than current devices. Designing these new devices will require accurate predictions of kinetic effects, which a re critical to successfully predicting their performance. For these de vices, previous models do not provide a satisfactory description of ca rrier transport. We use the half range expansion technique to resolve the source/channel and channel/drain boundary layers, and thus determi ne the carrier current distribution.