A DEGENERATE QUASI-HYDRODYNAMIC MODEL FOR SEMICONDUCTOR-DEVICES

Authors
JUNGEL A
Citation
A. Jungel, A DEGENERATE QUASI-HYDRODYNAMIC MODEL FOR SEMICONDUCTOR-DEVICES, Zeitschrift fur angewandte Mathematik und Mechanik, 76, 1996, pp. 563-564
Citations number
8
Categorie Soggetti
Mathematics,"Mathematical Method, Physical Science",Mechanics,Mathematics
Journal title
Zeitschrift fur angewandte Mathematik und Mechanik → ACNP
ISSN journal
00442267
Volume
76
Year of publication
1996
Supplement
2
Pages
563 - 564
Database
ISI
SICI code
0044-2267(1996)76:<563:ADQMFS>2.0.ZU;2-B
Abstract
A degenerate drift-diffusion model for semiconductors which is applica ble in high injection regimes is presented. An existence and uniquenes s result for transient solutions is recalled. The static voltage-curre nt characteristic of a pn-junction diode is compared with the characte ristic obtained from the standard drift-diffusion model.