THE RECTIFICATION STUDIES ON THE P-ION IMPLANTED C-60()SI FILMS/

N-type doping of the C-60 films deposited on Si substrates has been ac hieved by 80 keV P+-ion implantation with doses of 2x10(14) cm(-2) at room temperature. The heterostructures composed of the n-type doped C- 60 films and n- or p-type Si(111), Si(100) substrates are studied in v iew of semiconductor heterojunctions. The rectification and other elec trical characteristics of the P+-ion implanted n-C-60/n-(p-)Si heteros tructures are disclosed by the current-voltage (I-V) measurements at r oom temperature. The n-C-60/p-Si heterostructures show stronger rectif ication than n-C-60/n-Si heterostructures and Si(111) substrates are f ound to be more suitable for forming n-C-60/Si heterostructures than S i(100) substrates.