STRAIN THYRISTOR WITH AN ACCELERATING ELECTRIC-FIELD IN THE FIRST BASE

The switching voltage, switching current, and holding current of a p()-n-p-n(+) strain thyristor (thyristor activated by deforming stress) are calculated. The calculations are based on the two-transistor model , where one of the constituent transistors is a strain transistor with an accelerating electric field in the base region. The analytical rel ations derived in the article can be used to optimize the topology of a strain thyristor and to select its operating regime. (C) 1996 Americ an Institute of Physics.