MODEL FOR THE BUILDUP OF PHOSPHORUS AT SILICON SURFACES

A quantitative model is developed for the buildup of phosphorus in the surface region of silicon during thermal annealing. The model include s migration of mobile diffusion components (vacancies and E-centers) t oward the surface under the action of the surface potential and comple x formation at high impurity concentrations. The model provides a quan titative description of the experimentally observed dependence of the relative height of the surface concentration peak on the volume impuri ty concentration. (C) 1996 American Institute of Physics.