INTERBAND IR OPTICAL-TRANSITIONS ON LANDAU-LEVELS OF BISMUTH AT T=80 K

Authors
IVANOV KG KONDAKOV OV BROVKO SV ZAITSEV AA
Citation
Kg. Ivanov et al., INTERBAND IR OPTICAL-TRANSITIONS ON LANDAU-LEVELS OF BISMUTH AT T=80 K, Semiconductors, 30(9), 1996, pp. 831-833
Citations number
4
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
30
Issue
9
Year of publication
1996
Pages
831 - 833
Database
ISI
SICI code
1063-7826(1996)30:9<831:IIOOLO>2.0.ZU;2-Q
Abstract
Oscillations associated with interband optical transitions on Landau l evels have been obtained in samples of single crystal Bi consisting of two plane-parallel slabs separated by a gap of 2-3 times the waveleng th of radiation (10.6 mu m) introduced into the gap in pulsed magnetic fields at T=80 K. The possibility is demonstrated of using these osci llations to obtain IR spectra of processes lasting less than 10(-4) s. (C) 1996 American Institute of Physics.