PHOTODIODES BASED ON INAS1-XSBX SOLID-SOLUTIONS FOR THE SPECTRAL BANDIN THE RANGE 3-5 MU-M

Photodiode structures based on InAs1-xSbx (x=0.12-0.14) solid solution s have been grown by liquid phase epitaxy on InAs(111) substrates with a lattice mismatch Delta a/a less than or equal to 1%. The spectral s ensitivity, current-voltage characteristics, differential resistance R (0), and specific detectivity D were studied for temperatures of 77-3 00 K. The photodiode noise was calculated and compared with experiment . It is shown that the generation recombination noise predominates for temperatures of 77-200 K. A high specific detectivity is attained at the spectral maximum: D-lambda=3 X 10(11) cm . Hz(1/2)/W at lambda=3. 8 mu m (77 K) and D-lambda=5 x 10(9) cm . Hz(1/2)/W at lambda=4.35 mu m (200 K). (C) 1996 American Institute of Physics.