EFFECT OF DEPOSITION TEMPERATURE ON THE PHOTOLUMINESCENCE PROPERTIES OF A-C-H FILMS

Citation
Ba. Vasilev et al., EFFECT OF DEPOSITION TEMPERATURE ON THE PHOTOLUMINESCENCE PROPERTIES OF A-C-H FILMS, Semiconductors, 30(9), 1996, pp. 849-850
Citations number
7
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
10637826
Volume
30
Issue
9
Year of publication
1996
Pages
849 - 850
Database
ISI
SICI code
1063-7826(1996)30:9<849:EODTOT>2.0.ZU;2-G
Abstract
A study is made of the photoluminescence characteristics (fatigue, Sto kes and anti-Stokes emission, decay kinetics) of films of amorphous di amond-like carbon (a-C:H) obtained at various substrate temperatures, T-s=25-430 degrees C. These data demonstrate the temperature dependenc e of the sp(2)/sp(3) ratio, which determines the photoluminescence eff iciency. It is shown that photoluminescence fatigue is related to the presence of metastable C-H-C bonds, some of which also are determined by T-s. (C) 1996 American Institute of Physics.