Gt. Alekseeva et al., DEFECTS IN SODIUM-DOPED LEAD AND TIN CHALOGENIDES - FORMATION, INTERACTION, AND INFLUENCE OF THE DEFECTS ON THE ELECTRONIC-SPECTRUM, Semiconductors, 30(9), 1996, pp. 864-867
Studies are made of a broad range of changes in the transport properti
es of sodium-doped Pb1-xSnxSe (x=0.03-0.10) solid solutions associated
with the presence of resonant impurity states which fix the location
of the Fermi level. It is shown that only a small fraction of Sn atoms
(less than 1.3 at.%) participate in the formation of the impurity ban
d. A model is proposed for defect formation in the lead and tin chalco
genides and for their interaction which depends on the type of chalcog
enide, The properties of sodium-doped solid solutions of Pb(Sn)Te and
Pb(Sn)Se are interpreted in terms of this model. (C) 1996 American Ins
titute of Physics.