FORMATION OF VERTICALLY ALIGNED ARRAYS OF STRAINED INAS QUANTUM DOTS IN A GAAS(100) MATRIX

Citation
Ay. Egorov et al., FORMATION OF VERTICALLY ALIGNED ARRAYS OF STRAINED INAS QUANTUM DOTS IN A GAAS(100) MATRIX, Semiconductors, 30(9), 1996, pp. 879-883
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
10637826
Volume
30
Issue
9
Year of publication
1996
Pages
879 - 883
Database
ISI
SICI code
1063-7826(1996)30:9<879:FOVAAO>2.0.ZU;2-0
Abstract
A method of controlling the shape and size of elastically stressed InA s islands grown in a GaAs matrix is proposed and realized. The method is based on vertical alignment of the islands in the neighboring rows, an effect observed when several rows of islands are separated by spac ers whose thickness does not exceed the characteristic island height. As a result of the vertical alignment, nonpyramidal quantum dots with an increased height-to-base ratio (confirmed by transmission electron microscopy) are formed. The results of optical investigations of such structures show large changes in the carrier energy spectrum in the In As quantum islands. (C) 1996 American Institute of Physics.