Ay. Egorov et al., FORMATION OF VERTICALLY ALIGNED ARRAYS OF STRAINED INAS QUANTUM DOTS IN A GAAS(100) MATRIX, Semiconductors, 30(9), 1996, pp. 879-883
A method of controlling the shape and size of elastically stressed InA
s islands grown in a GaAs matrix is proposed and realized. The method
is based on vertical alignment of the islands in the neighboring rows,
an effect observed when several rows of islands are separated by spac
ers whose thickness does not exceed the characteristic island height.
As a result of the vertical alignment, nonpyramidal quantum dots with
an increased height-to-base ratio (confirmed by transmission electron
microscopy) are formed. The results of optical investigations of such
structures show large changes in the carrier energy spectrum in the In
As quantum islands. (C) 1996 American Institute of Physics.