COMPUTER-MODEL OF GROWTH OF AN A(III)B(III)C(V) A(III)C(V) HETEROJUNCTION WITH A LATERALLY INHOMOGENEOUS DISTRIBUTION OF CONSTITUENT-A AND CONSTITUENT-B DURING MOLECULAR-BEAM EPITAXY/

Authors
PESKOV NV MEDVEDEV BK
Citation
Nv. Peskov et Bk. Medvedev, COMPUTER-MODEL OF GROWTH OF AN A(III)B(III)C(V) A(III)C(V) HETEROJUNCTION WITH A LATERALLY INHOMOGENEOUS DISTRIBUTION OF CONSTITUENT-A AND CONSTITUENT-B DURING MOLECULAR-BEAM EPITAXY/, Semiconductors, 30(9), 1996, pp. 886-890
Citations number
18
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
30
Issue
9
Year of publication
1996
Pages
886 - 890
Database
ISI
SICI code
1063-7826(1996)30:9<886:COGOAA>2.0.ZU;2-I
Abstract
Results are presented from computer simulations of the epitaxial growt h of A(x)(III)B(1-x)(III)C(V)/A(III)C(V) heterojunctions on a vicinal (001) facet. Under certain conditions, a lateral periodic distribution of the constituents A and B is seen in the region of the heterojuncti on. (C) 1996 American Institute of Physics.