QUANTUM DOTS IN THE STRONG CONFINEMENT REGIME - A MODEL SYSTEM FOR GAIN IN QUASI-ZERO-DIMENSIONAL SEMICONDUCTORS

Authors
GIESSEN H WOGGON U FLUEGEL B MOHS G HU YZ KOCH SW PEYGHAMBARIAN N
Citation
H. Giessen et al., QUANTUM DOTS IN THE STRONG CONFINEMENT REGIME - A MODEL SYSTEM FOR GAIN IN QUASI-ZERO-DIMENSIONAL SEMICONDUCTORS, Chemical physics, 210(1-2), 1996, pp. 71-78
Citations number
21
Categorie Soggetti
Physics, Atomic, Molecular & Chemical
Journal title
Chemical physics → ACNP
ISSN journal
03010104
Volume
210
Issue
1-2
Year of publication
1996
Pages
71 - 78
Database
ISI
SICI code
0301-0104(1996)210:1-2<71:QDITSC>2.0.ZU;2-E
Abstract
We present a model for gain in a quasi zero-dimensional quantum confin ed semiconductor system. Due to a combination of a multitude of one-el ectron-hole pair and two-electron-hole pair transitions and inhomogene ous broadening, the gain region is broad, quasi-continuous and stretch es below the absorption edge. Femtosecond experiments in the gain regi on of strongly confined CdSe quantum dots confirm our theoretical pred ictions.