COMPENSATION CENTER OF CR3+ IN GAAS CODOPED WITH CR AND IN FOR OBTAINING A SEMIINSULATING PROPERTY

Authors
PARK YJ YEOM TH PARK IW CHOH SH MIN SK
Citation
Yj. Park et al., COMPENSATION CENTER OF CR3+ IN GAAS CODOPED WITH CR AND IN FOR OBTAINING A SEMIINSULATING PROPERTY, Solid state communications, 101(4), 1997, pp. 219-223
Citations number
19
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
101
Issue
4
Year of publication
1997
Pages
219 - 223
Database
ISI
SICI code
0038-1098(1997)101:4<219:CCOCIG>2.0.ZU;2-Z
Abstract
The dependences of Cr2+ and Cr3+ electron paramagnetic resonance (EPR) signals as a function of Cr concentration have been investigated in c onjunction with clarifying the atomic configuration for obtaining semi -insulating properties in a vertical gradient freeze (VGF)-GaAs single crystal codoped with Cr and In (VGF-GaAs:Cr,In). Cr2+ EPR signals are observed in both samples of semi-insulating and semiconducting GaAs: Cr,In single crystals, whereas Cr3+ EPR signals can be observed only i n semi-insulating samples. The semi-insulating properties become obvio us when increasing the intensity of Cr3+ and Cr2+ EPR signals in VGF-G aAs:Cr,In crystals. Isolated Cr-Ga(3+) ions play an important role in GaAs as a charge compensation center for obtaining semi-insulating pro perty. Copyright (C) 1996 Elsevier Science Ltd