HOLE TUNNELING THROUGH HIGHLY TRANSPARENT SYMMETRICAL DOUBLE-BARRIER SEMICONDUCTOR STRUCTURES

Using the transfer-matrix formalism, we investigate the tunneling of h oles through symmetric double-barrier semiconductor structures with di fferent heights of outer and inner edges. It is shown that, under appr opriate conditions, a monotonic behavior (absence of resonant tunnelin g) occurs in the transmission coefficient in the absence or presence o f the band mixing effect. Moreover, due to the band mixing effect, the monotonic behavior in all types of the transmission coefficient is on ly achievable when the resonant peak, related to the ground states of heavy holes in the corresponding potential well, disappears. Copyright (C) 1996 Elsevier Science Ltd