COMPLETE OPTICAL ANALYSIS TO OBTAIN THE ABSORPTION-COEFFICIENT OF THEINTERSTITIAL OXYGEN VIBRATION IN SILICON

The concentration of interstitial oxygen in single-crystal silicon is linearly dependent on the absorption coefficient of the corresponding local vibration in the infrared. This absorption coefficient is usuall y determined from the spectral absorbance. Optical and geometrical par ameters of the investigated sample influence the measurements and lowe r the determination precision. Instead of this standard method, the ap plication of complete optical analysis for the investigated sample is shown. The proposed method overcomes most problems that are involved i n the standard procedure. The thickness and degree of rear surface dam age of the reference sample are immaterial. The error of the standard determination procedure is discussed in terms of its dependence on the degree of sample surface damage.