ESTIMATION OF THE LET THRESHOLD OF SINGLE EVENT UPSET OF MICROELECTRONICS IN EXPERIMENTS WITH CF-252

Authors
KUZNETSOV NV NYMMIK RA
Citation
Nv. Kuznetsov et Ra. Nymmik, ESTIMATION OF THE LET THRESHOLD OF SINGLE EVENT UPSET OF MICROELECTRONICS IN EXPERIMENTS WITH CF-252, Radiation measurements, 26(3), 1996, pp. 527-530
Citations number
8
Categorie Soggetti
Nuclear Sciences & Tecnology
Journal title
Radiation measurements → ACNP
ISSN journal
13504487
Volume
26
Issue
3
Year of publication
1996
Pages
527 - 530
Database
ISI
SICI code
1350-4487(1996)26:3<527:EOTLTO>2.0.ZU;2-6
Abstract
A method is proposed for analyzing single event upsets (SEU) in large scale integration circuits of random access memory (RAM) when exposed to Cf-252 fission fragments. The method makes it possible to find the RAM linear energy transfer (LET) threshold to be used for estimation o f RAM SEU rates in space. The method is illustrated by analyzing exper imental data for the 2 x 8 kbit CMOS/bulk RAM. Copyright (C) 1996 Else vier Science Ltd