A COMPARATIVE-EXAMINATION OF ION-IMPLANTED N(-DEGREES-C AND 450-DEGREES-C()P JUNCTIONS ANNEALED AT 1000)

A comparative examination is presented between two series of As+ impla nted junctions into (100) Si substrates with varying Boron concentrati on N-s. The post-implantation annealing temperatures were 1000 degrees C for one series and 450 degrees C for the other. This is done in ord er to identify the specific cause for the inferior performance of the 450 degrees C junctions which was shown to progressively degrade as N- s increases. It is found that the increase in N-t, the trapping center s concentration in the 450 degrees C junctions is not the only reason for the above behavior and that the trend of E(t), the trapping center s energy level with respect to E(i), the intrinsic energy level is dom inant. The data show that in contrast to the 1000 degrees C junctions, \E(t) - E(i)\ decreases with increasing N-s in the 450 degrees C junc tions, increasing the generation rate, resulting the inferior performa nce. Junctions in 1.6 x 10(14) cm(-3) substrates, outstandingly exhibi t comparable performance in both annealing temperatures.