Microwave sintering processes were observed to substantially enhance t
he densification rate for ZnO varistor materials. Samples microwave si
ntered at 900-1200 degrees C for 10 min reached the same high density
as those conventionally sintered at the same temperature for 60 min. A
similar tendency was observed for the grain size. Prolonged microwave
sintering, however, resulted in fast grain growth and degraded electr
ic field-current density (E-J) properties. Capacitance-voltage (C-V) a
nalysis indicated that the degradation in E-J behavior primarily resul
ted from the decrease in grain boundary barrier height. The modificati
on of the grain boundary electrical properties, in turn, is ascribed t
o the loss of volatile Bi species along the grain boundaries.