ELECTRICAL-PROPERTIES OF ZNO VARISTORS PREPARED BY MICROWAVE SINTERING PROCESS

Citation
Cs. Chen et al., ELECTRICAL-PROPERTIES OF ZNO VARISTORS PREPARED BY MICROWAVE SINTERING PROCESS, JPN J A P 1, 35(9A), 1996, pp. 4696-4703
Citations number
27
Categorie Soggetti
Physics, Applied
Volume
35
Issue
9A
Year of publication
1996
Pages
4696 - 4703
Database
ISI
SICI code
Abstract
Microwave sintering processes were observed to substantially enhance t he densification rate for ZnO varistor materials. Samples microwave si ntered at 900-1200 degrees C for 10 min reached the same high density as those conventionally sintered at the same temperature for 60 min. A similar tendency was observed for the grain size. Prolonged microwave sintering, however, resulted in fast grain growth and degraded electr ic field-current density (E-J) properties. Capacitance-voltage (C-V) a nalysis indicated that the degradation in E-J behavior primarily resul ted from the decrease in grain boundary barrier height. The modificati on of the grain boundary electrical properties, in turn, is ascribed t o the loss of volatile Bi species along the grain boundaries.